Electro-Optic KTN Deflector Stabilized with 405-nm Light Irradiation for Wavelength-Swept Light Source

摘要

We have developed a highly stable electro-optic KTa_(1-x)Nb_xO_3 (KTN) deflector by enhancing electron transportation through KTN crystal. The amount of current is increased with 405-nm light irradiation to rapidly generate a stable refractive-index change, which induces deflection. The deflection angle is set at 160 mrad within tens of seconds and is kept at that angle for 3,000 hours. The developed deflector has been applied to a wavelength-swept light source to measure the thickness of Si wafers with a 3.6-mm optical length. The precision of 0.1-μm has been continuously achieved corresponding to the stability of the KTN deflector.