A New Semiconductor-Wafer Market Based on the Deepening of Natural Surface Undulations to Form Strongly Textured Atomic Ridges (STAR) With Pitches from 0.6 to 5.4 nm: Model Demonstrations in the Physical and Life Sciences

摘要

A broad patent position has been established for semiconductor wafers with physically-deepened grooves, ridges and dots on particular crystal planes with perfect pitches of 0.9 to 5.4 nm. Optical lithography is used in a standard production facility on top of deepened natural underlying nanotexture to produce quite useful new devices and ICs. See www.starmega.com. The very high value-added com-ponent of these wafers is the business opportunity. One method for producing nanoridges on any crystal surface (including III-Vs) will be discussed. Several applications will be demonstrated with mock-ups: ballistic transport; ultra-low-power MOSFETs; low-cost simultaneous sensing of hundreds of different molecules based on arrays containing nanotubes, DNA, and/or other molecules; high temperature BCS superconductors (not "HTS") with Buckyballs between flexible walls; mega-tip nanoprobes; particle filters with openings down to 0.3 nm for nano-shadow masks and for oxygen enrichment of air.