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Effect of post-growth annealing on the optical properties of LiGaS-2nonlinear crystals

机译:生长后退火对LiGaS-2非线性晶体光学性质的影响

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High chalcogen volatility and Li interaction with the container walls result in variation of crystal composition and presence of both extended and point defects in as-grown LiGaS-2 nonlinear crystals. Annealing in appropriate conditions is used to correct the composition and improve the optical quality. We annealed LiGaS-2 in vacuum, in the presence of Li-2S, Ga-2S-3, and S, and studied changes in transmission, photoluminescence and photo-induced absorption. OH groups, S-H and S-S complexes, sulfur vacancies and cation antisite defects (Ga-(Li)) are most important. Photo-induced absorption is reversible: It appears after illumination with UV/blue light and disappears after illumination with IR light or by heating the sample.
机译:硫族元素的高挥发性和Li与容器壁的相互作用导致晶体组成发生变化,并在生长的LiGaS-2非线性晶体中同时存在延伸缺陷和点缺陷。在适当条件下进行退火可校正成分并改善光学质量。我们在存在Li-2S,Ga-2S-3和S的情况下在真空中对LiGaS-2进行了退火,并研究了透射率,光致发光和光致吸收的变化。 OH基,S-H和S-S配合物,硫空位和阳离子反位缺陷(Ga-(Li))最重要。光致吸收是可逆的:在用紫外线/蓝光照射后出现,在用红外光照射或加热样品后消失。

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