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Noise in superconducting MgB_2 thin film

机译:MgB_2超导薄膜中的噪声

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摘要

Noise was studied in an MgB2 thin film grown on a SiN substrate, with a superconducting transition temperature, Tc , near 39K. At the mid-point of the transition and at 10Hz a noise spectral density S_v = 0.34nVHz~(1/2) was measured. The temperature noise, Kn , of the MgB2 film at different frequencies is compared to that of cuprate high temperature superconducting (HTS) thin films (with Tc~90 K) used currently in transition-edge devices. Kn values predict that 2-D arrays of high performance infrared devices can be developed using MgB2.
机译:研究了在SiN衬底上生长的MgB2薄膜中的噪声,超导转变温度Tc接近39K。在过渡的中点且在10Hz,测量到噪声频谱密度S_v = 0.34nVHz〜(1/2)。将MgB2薄膜在不同频率下的温度噪声Kn与目前在过渡边缘器件中使用的铜酸盐高温超导(HTS)薄膜(Tc〜90 K)进行比较。 Kn值预测可以使用MgB2开发出高性能红外设备的二维阵列。

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