Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu, Shizuoka 432, JAPAN;
Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu, Shizuoka 432, JAPAN;
Graduate School of Electronic Science and Technology, Shizuoka University 3-5-1, Johoku, Hamamatsu, Shizuoka 432, JAPAN;
Department of Materials Science and Technology, Shizuoka University 3-5-1, Johoku, Hamamatsu, Shizuoka 432, JAPAN;
机译:在Pb(Mg_(1/3)Nb_(2/3))O_3-Pb(Zn_(1/3)Nb_(2/3)中添加Ba(W_(0.5)Cu _(_(0.5))O_3的影响)O_3-Pb(Zr(0.52)Ti_(0.48))O_3陶瓷的烧结温度,电性能和相变
机译:(1-x)[Pb(Mg_(0.5)W_(0.5))O_3] -xPbTiO_3陶瓷中变质相边界的X射线衍射和介电研究
机译:(1-x)[Pb(Mg_(0.5)W_(0.5))O_3] -xPbTiO_3陶瓷中变质相边界的X射线衍射和介电研究
机译:BiFeO / sub 3 /和Ba(Cu / sub 0.5 / W / sub 0.5 /)O / sub 3 /的低温烧结PZT陶瓷的形相界和微观结构
机译:无铅Na0.5bi 0.5tio3陶瓷中的相位切换行为
机译:钨替代对低烧结温度下(Na0.5Bi0.5)MoO4陶瓷晶体结构相变和微波介电性能的影响
机译:电场引起的无铅相变相界上的相变:以93%(Bi0.5Na0.5)TiO3-7%BaTiO3压电陶瓷为例
机译:pzt中的单斜相:在准同型相界上的新光