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Morphotropic phase boundary and microstructure of low-temperature sintered PZT ceramics with BiFeO/sub 3/ and Ba(Cu/sub 0.5/W/sub 0.5/)O/sub 3/

机译:BiFeO / sub 3 /和Ba(Cu / sub 0.5 / W / sub 0.5 /)O / sub 3 /的低温烧结PZT陶瓷的形相界和微观结构

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The sintering temperature of the 0.5 wt% MnO/sub 2/-added Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/ ceramics was successfully lowered down to 935/spl deg/C by the addition of the complex oxides, BiFeO/sub 3/ and Ba(Cu/sub 0.5/W/sub 0.5/)O/sub 3/. This addition may cause a shift of the morphotropic phase boundary (MPB) at which the Pb(Zr,Ti)O/sub 3/ ceramics shows excellent piezoelectric and dielectric properties. Indeed, the XRD studies reveal that the MPB of the ceramics with additives shifts toward the Ti-rich composition. Thus, the electrical properties are affected by this shift of the MPB and the optimum Zr/Ti ratio of 52/48 is determined. Furthermore, the microstructural analyses by using SEM indicate that the additives seem to form stable grain boundaries and the most stable boundaries are obtained with the corresponding composition.
机译:0.5wt%MnO / sub 2 / sub 2 / cadded pb(Zr / sub 0.53 / ti / sub 0.47 /)o / sub 3 /陶瓷的烧结温度通过加入成功降低至935 / spl deg / c复合氧化物,BIFEO / SUB 3 /和BA(Cu / Sub 0.5 / W / Sub 0.5 /)O / Sub 3 /。该加法可能导致Morphotopic相位边界(MPB)的偏移,其中PB(Zr,Ti)O / Sub 3 /陶瓷显示出优异的压电和电介质特性。实际上,XRD研究表明,陶瓷的MPB具有添加剂的富含Ti的组合物。因此,电特性受到MPB偏移的影响,并且确定了52/48的最佳Zr / Ti比。此外,使用SEM的微观结构分析表明添加剂似乎形成稳定的晶界,并且用相应的组合物获得最稳定的边界。

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