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Field distributions in thin water films - a comparison of theoretical and empirical trends

机译:薄水膜中的场分布-理论和经验趋势的比较

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Field ionization of thin water layers adsorbed onto a platinum field emitter was investigated by numerical simulation and analysis of experimental data. The numerical simulation, which includes a field-dependent relative permitivity, was developed to predict the field distribution around a water-covered field emitter tip. The model predicts that the dominant field occurs at the water-vacuum interface in thin layers. In the experiments, water adlayers were grown under field-free conditions by exposure of a cryogenically cooled emitter tip to water vapor in ultrahign vacuum. Field ionization was probed by ramped field desorption (RFD) in which desorption of ionic speces (hydrated protons) is measured while increasing the applied electric field linearly in time. The onset field of ionization decreased from 0.3 to 0.2 V/A as temperature increased from 130 to 150 K. An activation barrier of 0.7 eV (16 kcal/mol) for ionization of water to produce hydrated protons and hydroxide ions was estimated from the temperature dependence of the onset field. The experimental trends agree with the predicted trends for thin water layers.
机译:通过数值模拟和实验数据分析研究了吸附在铂场发射器上的薄水层的场电离。数值模拟包括与场有关的相对介电常数,用于预测水覆盖的场发射器尖端周围的场分布。该模型预测主场出现在薄层中的水-真空界面处。在实验中,通过在超高真空下将低温冷却的发射器尖端暴露于水蒸气,在无场条件下生长水沉积层。场电离通过倾斜场解吸(RFD)进行探测,其中测量离子物种(水合质子)的解吸,同时随时间线性增加施加的电场。随着温度从130 K增加到150 K,电离的起始场从0.3降低到0.2 V / A。从该温度估计水的电离以产生水合质子和氢氧根离子的激活势垒为0.7 eV(16 kcal / mol)。发病场的依赖性。实验趋势与薄水层的预测趋势一致。

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