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THE EFFECT OF SINTERING PROCESS ON THE SUPERCONDUCTING PROPERTIES OF MgB_2 BULK AND TAPE

机译:烧结工艺对MgB_2块体和带材超导性能的影响

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摘要

MgB_2 superconductor with critical transition temperature of 39.9K has been synthesized. The supercoducting properties of MgB_2 bulk have been also studied after re-sintering heat treatment at 600℃, 700℃ and 800℃, It is found that the critical transition temperatures (onset) have slightly difference among the three samples. However, the transition widths and the normal state resistivity at 40K increase dramatically with increasing the re-sintering temperature for the 700℃ and 800℃ samples, corresponding to the occurrence of more impurities confirmed by x-ray diffraction patterns. At the same time, the microstructure shows that the grain size of MgB_2 grows larger and the structure becomes even dense. The transport critical current density for the unsintered Ni sheathed MgB_2 tape reaches 3.8x10~3A/cm~2, while the superconducting properties are very poor for the MgB_2 tapes subjected re-sintering process. This can be interpreted by forming more impurities during re-sintering process due to some air sealed into the tube during PIT process.
机译:合成了临界转变温度为39.9K的MgB_2超导体。在600℃,700℃和800℃进行了再烧结热处理后,还研究了MgB_2块的超导性能,发现三个样品的临界转变温度(开始)略有不同。然而,随着700℃和800℃样品的再烧结温度升高,在40K时的跃迁宽度和常态电阻率急剧增加,这对应于X射线衍射图证实了更多的杂质的出现。同时,显微组织表明MgB_2的晶粒尺寸变大并且结构变得致密。未烧结的镍包覆的MgB_2带的传输临界电流密度达到3.8x10〜3A / cm〜2,而经过再烧结的MgB_2带的超导性能非常差。这可以通过在再烧结过程中形成更多杂质来解释,这是由于在PIT过程中将一些空气密封到了管中。

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