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POLY(ESTER IMIDE)S AS HEAT-RESISTANT DIELECTRIC SUBSTRATES

机译:聚(酯酰亚胺)作为耐热介电基体

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摘要

Some commercially available polyimide (PI) films are known to possess good dimensionalrnstability against various thermal processes, which is based on their low linear coefficients ofrnthermal expansion (CTE). Therefore, they are used as dielectric substrates (base films) in flexiblernprinted circuit boards (FPC). However, the dimensional stability against water/moisturernabsorption is not always sufficient for the current PI systems. In the present work, we proposernpoly(ester imide)s (PEsIs) as a new type of the base film materials. The PEsI filmsrnsimultaneously achieved low CTE comparable to that of cupper foils, suppressed waterrnabsorption (WA), low linear coefficients of humidity expansion (CHE), very high glass transitionrntemperatures (Tg), sufficient film toughness. An increase in the content of the ester groupsrnincorporated in the PI main chains somewhat reduced the non-flammability. In order to solve thisrnproblem, we prepared novel phosphorus-containing monomers. Copolymerization using the Pcontainingrnmonomers at a minor content drastically improved the non-flammability whilernmaintaining the excellent combined properties. Recently, easily foldable low-stiffness FPCs arerndesired in some cases. The use of lower-modulus base films can be an effective strategy for thisrnpurpose. The present work also discusses an approach addressed to lower modulus withoutrnsacrificing excellent combined properties.
机译:已知一些市售的聚酰亚胺(PI)膜对各种热处理具有良好的尺寸稳定性,这是基于其低的线性线性热膨胀系数(CTE)。因此,它们被用作柔性印刷电路板(FPC)中的介电基板(基膜)。然而,对于当前的PI系统,针对水/水分吸收的尺寸稳定性并不总是足够的。在目前的工作中,我们提出了聚(酯酰亚胺)(PEsIs)作为新型的基膜材料。与铜箔相比,PEsI薄膜同时具有较低的CTE,抑制的吸水率(WA),较低的线性线性膨胀系数(CHE),非常高的玻璃化转变温度(Tg)和足够的薄膜韧性。掺入PI主链中的酯基含量的增加在某种程度上降低了不可燃性。为了解决这个问题,我们制备了新型的含磷单体。使用少量的含P单体进行共聚可大大改善不燃性,同时保持优异的组合性能。最近,在某些情况下需要易于折叠的低硬度FPC。为此目的,使用较低模量的基膜可以是有效的策略。本工作还讨论了一种在不牺牲优异的综合性能的情况下降低模量的方法。

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  • 会议地点 North Charleston SC(US)
  • 作者单位

    Department of Chemistry, Faculty of Science, Toho Universityrn2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan;

    Department of Chemistry, Faculty of Science, Toho Universityrn2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan;

    Department of Chemistry, Faculty of Science, Toho Universityrn2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan;

    Department of Chemistry, Faculty of Science, Toho Universityrn2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan;

    Department of Chemistry, Faculty of Science, Toho Universityrn2-2-1 Miyama, Funabashi, Chiba 274-8510, Japan;

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