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LUMINESCENT NANOPARTICLES: COLLOIDAL SYNTHESIS AND EMISSION PROPERTIES

机译:发光的纳米粒子:胶体的合成和发射特性

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摘要

This paper has described the different strategies that can be used for the colloidal synthesis of luminescent nanoparticles. The first studies concerned the case of Ⅱ-Ⅵ semiconductors, in which the luminescence is drastically affected by the surface trapping of excited carriers. Two strategies can be used to avoid surface trapping. The first consists of the elaboration of core/shell nanostructures by epitaxial growth of another semiconductor on the surface of the particles. This allows a limitation of the extension of the carrier's wavefunction at the surface of the particles and leads to a tremendous improvement of the emission. Another possibility consists of doping the nanoparticles with a luminescent ion (CdS:Mn). Rapid transfer of the energy of the excited carriers to the localized electrons of the luminescent ion avoids non radiative relaxation at the surface of the particles. High luminescent yields are also obtained, with an emission spectrum characteristic of the doping ion. The same strategy of using localized excited states is in fact commonly used for the elaboration of highly luminescent phosphors such as rare earth doped oxides. Recent investigations performed on YVO_4:Eu and LaPO_4:Ce,Tb show that nanoparticles exhibit high emission yields, which are nevertheless affected to some extent by the surface quenching species.
机译:本文描述了可用于发光纳米粒子胶体合成的不同策略。最初的研究涉及Ⅱ-Ⅵ半导体的情况,其中受激发的载流子的表面俘获极大地影响了发光。可以使用两种策略来避免表面陷印。首先是通过在颗粒表面外延生长另一种半导体来形成核/壳纳米结构。这限制了在颗粒表面上载流子的波函数的扩展,并导致发射的极大改善。另一种可能性是用发光离子(CdS:Mn)掺杂纳米颗粒。激发的载流子的能量快速转移到发光离子的局部电子上,避免了颗粒表面的非辐射弛豫。还获得了具有掺杂离子的发射光谱特征的高发光产率。实际上,使用局部激发态的相同策略实际上通常用于精细加工高发光磷光体,例如稀土掺杂的氧化物。最近对YVO_4:Eu和LaPO_4:Ce,Tb进行的研究表明,纳米粒子具有很高的发射率,但是在一定程度上受表面淬火物质的影响。

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