For porous silicon (PS) electroluminescent (EL) devices, metallisation is a key process. The state of the art of the main preparation methods of thin metallic films used in PS EL devices is described. Experimental results concerning the structural and electrical characterisation of the metal/PS/p-Si structures are also presented. Different materials, like Au, In, Au-In, In-Sn, Al, etc., in a variety of preparation conditions were used as a solid-state contact on the PS layers. The luminescent properties of these structures were checked after metallic layer deposition by exciting the samples with an UV lamp. It is known that the transparency of a thin layer of 15 nm thickness is 60
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