首页> 外文会议>NATO Advanced Research Workshop on Continuum Models and Discrete Systems; 20030630-0704; Shoresh(IL) >CONTINUUM FIELD MODEL OF DEFECT-INDUCED HETEROGENEITIES IN A STRAINED THIN LAYER
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CONTINUUM FIELD MODEL OF DEFECT-INDUCED HETEROGENEITIES IN A STRAINED THIN LAYER

机译:应变薄层中缺陷诱导异质性的连续场模型

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We investigate the effect of external stresses on structural and mechanical properties of a strained damaged thin layer by developing a continuum phase-field mesoscale model based on the introduction of an order parameter field, the defect concentration, coupled with a displacement field. We find that even in the case of an initially uniform distribution of point defects external stresses drive the nucleation of local regions with higher concentration of vacancies or self-interstitials than their average value over the film. The effect can explain our experimental findings relating generation of highly heterogeneous regions in cobalt disilicide film fabricated in self-aligned processing on a silicon surface as well as improvement of fracture toughness in a tetragonal zirconia ceramics with oxygen vacancies.
机译:通过在引入阶跃参数场,缺陷浓度和位移场的基础上建立连续相场中尺度模型,我们研究了外部应力对应变破坏的薄层的结构和力学性能的影响。我们发现,即使在点缺陷的初始分布均匀的情况下,外部应力也会驱动局部区域的形核,这些区域的空位或自填隙性浓度要高于其在薄膜上的平均值。该效果可以解释我们的实验发现,该发现与在硅表面上通过自对准处理制造的二硅化钴薄膜中高异质性区域的产生以及具有氧空位的四方氧化锆陶瓷的断裂韧性提高有关。

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