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LONG-TIME-SCALE SIMULATIONS OF AL(100) CRYSTAL GROWTH

机译:AL(100)晶体生长的长时间尺度模拟

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We have carried out simulations of Al(100) crystal growth using a combination of classical dynamics simulations and a new long time scale simulation method based on harmonic transition state theory. Atoms are deposited using classical dynamics over a time interval of a few picoseconds, but once the system has thermalized, the long time interval in between deposition events, a millisecond, is simulated using an extension of the kinetic Monte Carlo method. Here, relevant transitions in the system are found on the fly and the need for a predetermined event table and lattice approximation are eliminated. For a given state of the system, the dimer method is used to search for the saddle points on the potential energy rim surrounding the local energy minimum. The Al(100) surface is found to grow remarkably smoothly, even at temperatures as low as 30 K. As multilayer structures start to form, low barrier events involving concerted displacement of a number of atoms tend to smoothen the surface.
机译:我们已经结合经典动力学模拟和基于谐波过渡态理论的新型长时间尺度模拟方法对Al(100)晶体的生长进行了模拟。使用经典动力学在几皮秒的时间间隔内沉积原子,但是一旦系统热化,就可以使用动力学蒙特卡洛方法的扩展来模拟两次沉积事件之间的较长时间间隔(毫秒)。在这里,可以即时找到系统中的相关转换,从而消除了对预定事件表和晶格近似的需求。对于系统的给定状态,使用二聚体方法在围绕局部最小能量的势能边沿上搜索鞍点。发现Al(100)表面即使在低至30 K的温度下也能显着生长。随着多层结构的形成,涉及多个原子协同位移的低势垒事件趋于使表面光滑。

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