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NEW METHOD OF FABRICATION FRESNEL ZONE PLATE FORHARD X-RAY RADIATION

机译:r n Hard X射线辐照制备菲涅耳带的新方法

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We present the first results of fabrication the circular zone plate by means of high resolution negative tone inorganic HSQ (Hydrogen Silsesquioxane or XR-1541) electron-beam resist. Fresnel zone plates (FZPs) has been fabricated on the surface of silicon crystals for the energy from 8keV up to l00keV by electron beam lithography. Three different FZPs have been fabricated; circular FZP for the first diffraction order, circular compound FZP for the first and third diffraction order, and linear FZP for the first and second diffraction order. The parameters of the compound FZPs for first and third order were the following: the focal distance of first and third orders FZP is F =13.229cm for 0.1 nm wavelength, the entire aperture is 400.0016μm, the width of the outermost zones of the first and third orders is l00nm, and the number oi the first and third order zones is 1223.
机译:我们介绍了通过高分辨率负性无机HSQ(氢倍半硅氧烷或XR-1541)电子束抗蚀剂制造圆形波带片的初步结果。菲涅耳波带片(FZPs)已通过电子束光刻技术在硅晶体表面上制成,能量从8keV到100keV不等。已经制造了三种不同的FZP。圆形FZP用于第一衍射级,圆形化合物FZP用于第一和第三衍射级,线性FZP用于第一和第二衍射级。一阶和三阶复合FZP的参数如下:对于0.1 nm波长,一阶和三阶FZP的焦距为F = 13.229cm,整个孔径为400.0016μm,一阶最外层区域的宽度三阶为100nm,一阶和三阶区域的数目为1223。

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