Nanocrystals Embedded High-k Nonvolatile Memories - Bulk Film and Nanocrystal Material Effects

摘要

The principle of the nanocrystals embedded high-k nonvolatile memory device has been reviewed. The high-k stack could be fabricated with a simple and low cost one pumpdown sputtering method followed by rapid thermal annealing. The memory function of the device is controlled by material properties of the high-k and the embedded nanocrystal. Factors influencing the type of trapped charges, the charge trapping capacity, and reliability with respect to operation parameters and environment are discussed. This kind of device is potentially important for high density and highly reliable electronic products.