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DC and AC Symmetry Tests for MOSFET Models

机译:MOSFET模型的DC和AC对称性测试

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摘要

Symmetry around V_(ds) = 0 is a critical requirement for MOSFET models, e.g. as it affects the ability of a model to simulate distortion accurately for some RF CMOS mixers. The Gummel symmetry test has been the standard test used to evaluate the symmetry of MOSFET models. However, this test is only applicable to DC current, and is only valid when there is negligible gate or substrate current. This paper presents a DC symmetry test that is applicable in the presence of gate and substrate currents, and an AC symmetry test that is simple and effective in verifying symmetry of C_(gs) and C_(gd).
机译:V_(ds)= 0附近的对称性是MOSFET模型的关键要求,例如因为它会影响模型对某些RF CMOS混频器精确仿真失真的能力。 Gummel对称性测试已成为用于评估MOSFET模型对称性的标准测试。但是,该测试仅适用于直流电流,并且仅在栅极或衬底电流可忽略不计时才有效。本文提出了一种适用于存在栅极和衬底电流的直流对称性测试,以及一种简单而有效地验证C_(gs)和C_(gd)对称性的交流对称性测试。

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