CONFINED-QHALCOGENIDE PHASE CHANGE MEMORY WITH THIN METAL INTERLAYER FOR LOW RESET CURRENT BY FINITE ELEMENT MODELING

摘要

This paper reports on the confined-chalcogenide phase change memory with thin metal interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset current with simple architecture and fabrication. Thermal and heat flux distribution of both the normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and simulated by two-dimensional finite element modeling. It is intriguingly found that the reset operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to solve an over-programming fail issue due to confined heat dissipation in active area.