Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

摘要

Abstract: A diode type magnetically enhanced reactive ion etching system was used for Al alloy films and a triode type magnetically enhanced reactive ion etching system was used for SiO$-2$/ films. A same rotational permanent magnet was used for the diode and triode reactors. Excellent etching characteristics of TiN/Al-1%Si-0.5%Cu/TiN and SiO$-2$/ films were obtained at low pressure of about 1Pa. Simulations were also performed for drift motions of secondary electrons in the cathode sheath.!14