Climb/glide dislocation sources at low misfit Ge_xSi(001) interfaces

摘要

Detailed analysis of Burgers vectors and line directions has been carried out on the "double half loops",formed during growth,and other small loops,formed during growth and on annealing,observed by Perovic and Houghton (1992) in low misfit Ge_xSi_1-x / (001) Si heterostructures.Both defect types originate from small vacancy loops,near the interface,the former visibly associated with precipitates > 10 nm in size; both have to transform into glissile configurations by stress driven vacancy absorption and glide before generating misfit dislocations.This corresponds to the nucleation stage for misfit dislocation generation (Houghton 1991).