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New Electron Holographic Technique for the Measurement of Strain at the Nanoscale: Application to Electronic Devices and Multilayers

机译：用于纳米级应变测量的新电子全息技术：在电子设备和多层中的应用

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《Microscopy and microanalysis.;Microscopy and microanalysis.》||p.588-589|共2页
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Etienne Snoeck; Florent Houdellier; Florian Hüe; Martin H?tch;
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1. Nanoscale holographic interferometry for strain measurements in electronic devices [J] . Martin Hyetch, Florent Houdellier, Florian Huee, Nature . 2008,第7198期

机译：纳米级全息干涉术，用于电子设备中的应变测量
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3. Optoelectronic on-chip characterization of ultrafast electric devices: Measurement techniques and applications [J] . Pfeifer T., Heiliger H.-M. IEEE journal of selected topics in quantum electronics . 1996,第3期

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机译：柔性电极的便捷制造和纳米级硅酸盐血小板上银纳米颗粒的固定化以形成可穿戴电子设备的高导电性纳米杂化膜
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机译：电子和光电应用的选择性处理技术：量子阱器件和集成光学电路

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