Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy

著录项

• 来源
  《Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting》|2012年|1820-1821|共2页
• 会议地点 Phoenix AZ(US)
• 作者

  S.Y. Woo; S. Turner; N. Gauquelin; Z. Mi; G.A. Botton;

  展开▼
• 作者单位

  Department of Materials Science and Engineering, Brockhouse Institute for Materials Research and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Canada;

  rnEMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;

  rnDepartment of Materials Science and Engineering, Brockhouse Institute for Materials Research and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Canada;

  rnDepartment of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada;

  rnDepartment of Materials Science and Engineering, Brockhouse Institute for Materials Research and Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1, Canada;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词