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Fabrication and Characterization of Two Compliant Electrical Contacts for MEMS: Gallium Microdroplets and Carbon Nanotube Turfs

机译:MEMS的两个兼容电触点的制造和表征:镓微滴和碳纳米管草皮

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摘要

Because of their high mechanical compliance and electrical properties, the idea of using Ga and CNTs for micro electrical relay contacts has been investigated to minimize damage from switching and make good electrical contacts. Ga was electroplated into droplets on the order of 50 nm in radius on single crystal Si to create a contact for a switch that can be annealed to recover its original electrical properties after mechanical damage. CNTs were grown on Si substrates, coated with a thin Au layer, and transferred to other Si or Kapton substrates through thermocompression bonding. In the case of the Ga contact, repeated switching led to an increase in the resistance, but the resistance recovered after a thermal reflow process at 120 ℃. Longer term and larger area contacts were used to measure the contact behavior under switching conditions of up to 200 A/cm~2. At moderate cycling conditions (on the order of 200 cycles) the adhesion began to significantly degrade the switch. The oxidation behavior of the Ga droplets was characterized for thermal reflow, suggesting a passivating 30 nm oxide forms at 100 ℃. The oxide formed by the Ga is thin and fragile as demonstrated by its use in a switch. The Ga droplets were examined with electrical contact resistance nanoindentation and the loads at fracture and the onset of electrical contact were identified. CNT turfs were also tested for making patterned electrical contacts; turfs of lateral dimensions similar to the Ga droplets were tested using electrical resistance testing during nanoindentation and as macroscopic contacts, and shown to be able to carry similar current densities. The results will be compared between the two systems, and benefits and challenges of each will be highlighted for creating compliant electrical switches and contacts.
机译:由于它们的高机械柔韧性和电气特性,已经研究了将Ga和CNT用于微型继电器触点的想法,以最大程度地减少开关造成的损坏并形成良好的电气触点。将Ga电镀到半径为50 nm的单晶Si上的小滴中,以形成用于开关的触点,该触点可以退火,以在机械损坏后恢复其原始电性能。 CNT在Si衬底上生长,涂有一层薄的Au层,然后通过热压键合转移到其他Si或Kapton衬底上。在Ga接触的情况下,反复开关会导致电阻增加,但在120℃的热回流过程之后电阻会恢复。在开关条件高达200 A / cm〜2的条件下,使用了较长时间和较大面积的触点来测量接触行为。在适度的循环条件下(约200个循环),附着力开始显着降低开关性能。 Ga液滴的氧化行为具有热回流特性,表明在100℃时有30 nm的氧化物钝化。由Ga形成的氧化物薄且易碎,如其在开关中的使用所证明的那样。用电接触电阻纳米压痕检查Ga液滴,并确定断裂时的载荷和电接触的开始。还测试了CNT草坪是否可用于制作图案化的电触点。在纳米压痕过程中以及作为宏观接触,使用电阻测试对横向尺寸类似于Ga液滴的草皮进行了测试,结果表明该草皮能够承载相似的电流密度。将在两个系统之间对结果进行比较,并将重点介绍创建兼容的电气开关和触点所带来的好处和挑战。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Mechanical and Materials Engineering, Washington State University, Pullman WA USA;

    Mechanical and Materials Engineering, Washington State University, Pullman WA USA;

    Mechanical and Materials Engineering, Washington State University, Pullman WA USA;

    Mechanical and Materials Engineering, Washington State University, Pullman WA USA;

    Mechanical and Materials Engineering, Washington State University, Pullman WA USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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