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Fundamentals and application of materials integration for low-power piezoelectrically actuated ultra-nanocrystalline diamond MEMS/NEMS

机译:低功率压电致动超纳米金刚石MEMS / NEMS的材料集成基础知识和应用

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摘要

Most current microanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to several projected MEMS/NEMS devices, particularly those that require materials with high Young's modulus for MEMS resonators or low surface adhesion forces for MEMS/NEMS working in conditions with extensive surface contact. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD~®) in film form with 2-5 nm grains exhibits excellent properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(Zr_xTi_(1-x))O_3 (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This paper describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.
机译:当前大多数微/纳米机电系统(MEMS / NEMS)都基于硅。然而,硅表现出相对较差的机械/摩擦学性能,损害了对几种预计的MEMS / NEMS器件的应用,尤其是那些要求具有高杨氏模量的材料用于MEMS谐振器或具有低表面粘附力的材料的MEMS / NEMS设备,其在广泛的表面接触条件下工作。具有优异的机械/摩擦学性能的金刚石薄膜可提供出色的替代平台材料。具有2-5 nm晶粒的薄膜形式的超纳米晶金刚石(UNCD〜®)对高性能MEMS / NEMS器件具有优异的性能。同时,压电Pb(Zr_xTi_(1-x))O_3(PZT)膜可提供较高的灵敏度/较低的电噪声,以在相对较低的电压下感应/较高的力致动。因此,PZT和UNCD薄膜的集成为高级MEMS / NEMS设备提供了高性能平台。本文介绍了这种低压压电驱动的混合PZT / UNCD悬臂的集成和演示的基础。

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