Effect of intrinsic layer on the performance of InGaP/GaAs dual Junction solar cell

摘要

In this paper, the effect of an intrinsic layer inside the PN junction of both top and bottom cell of InGaP/GaAs Double Junction solar cell is investigated using computational TCAD modeling tool. Inclusion of intrinsic layer shows better performance in comparison to other structures and produces high conversion efficiency of 29.72% (1sun), high shortcircuit current density and open circuit voltage. For this optimized cell structure, the maximum Jsc=13.65mA/cm2, Voc=2.44 V, fill factor (FF) = 89.08 are obtained under AM1.5G illumination. The detail of photo-generation rate of top as well as bottom cell has been investigated through the incident light of various wavelengths.