A proposed DC line current measurement technique based on current induced magnetic field sensing using n-channel enhancement-type MOSFET

摘要

In this paper, a DC line current measurement technique by sensing the magnetic field due to the steady current flowing through the line has been proposed. A circuit in which the n-channel enhancement-type MOSFET is used as magnetic field sensor is designed and tested for a wide range of DC line currents. The circuit is capable of measuring both the magnitude and direction of the DC current flowing through a line without any direct electrical contact. BS170 n-channel enhancement type MOSFET is used as magnetic field sensor. Experimental results are very encouraging to use this technique for measuring wide range of DC line currents without making any electrical contact.