Abstract: Spin-on glass (SOG) is used as a planarizing component of the interlevel dielectric in a multilevel integrated circuit (IC). However, the presence of SOG may compromise IC performance due to water absorption. Several effects are discussed: (1) `Poisoning' of contacts between two metallization levels. (2) Accelerated hot-carrier aging of the MOS transistor. (3) Formation of mobile positive charge in the SOG layer. The magnitude of this charge may be high enough to invert the silicon surface. (4) Many-fold increase in the SOG dielectric constant and related increase in parasitic capacitance of the IC. !12
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