In situ Load- Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter- Wave Frequencies

摘要

An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35 nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large-signal characterization of a 2×15 μm device is demonstrated at 300 GHz. With this MMIC the unique characterization and large-signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large-signal characterization of a single device is 1850 μm × 400 μm.