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Non-Volatile Memory Technologies: The Quest for Ever Lower Cost

机译:非易失性存储器技术:追求较低的成本

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Growth of flash memory business over last 20 years was driven by never ending reduction of memory cost through Moore's Law and innovations, and the quest for ever lower cost will continue for many years to come. This review begins with a brief summary of trend of flash memory cost reduction up to now. Then some of the improvement efforts on existing technologies reported by industry will be discussed. NAND flash will continue to be the cost reduction driver in next few years but will face increasing level of difficulties. Innovations will enable the trend to continue. For longer term, industry is developing new memory technologies that have promise to deliver ever lower cost. Some more mature new technology concepts will be discussed in this review. General direction is to go to multi-layer memories with multi-level cell capabilities. There are also alternative approaches like probe based storage. Enhancement from system level solution will help existing technologies as well as facilitating introduction of new technologies. It is expected that products from few new technologies will take off in coming years to enable continuation of cost reduction of non-volatile memories, meeting insatiable demand of existing devices for more memory capacity at lower cost, as well as creating new devices and new markets.
机译:过去20年来的闪存业务的增长是通过摩尔法和创新的永恒降低记忆成本的推动,并且追求成本更低的追求将持续多年。此评价首先摘要闪存成本降低的趋势趋势。然后,将讨论行业报告现有技术的一些改进努力。 NAND Flash将继续成为未来几年的降低成本驾驶员,但将面临困难的增加。创新将使趋势继续下去。对于长期来说,行业正在开发新的记忆技术,这些技术承诺提供更低的成本。在本次审查中将讨论一些成熟的新技术概念。一般方向是通过多层电池功能转到多层存储器。还有基于探针的存储等替代方法。系统级别解决方案的增强将有助于现有技术,并促进引入新技术。预计,来自未来几年的新技术的产品将起飞,以便继续降低非易失性记忆的成本,满足现有设备的满足需求,以实现更低的内存容量,以及创建新的设备和新市场。 。

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