2-bit Poly-Si-TFT Nonvolatile Memory Using Hafnium oxide, Hafnium Silicate and Zirconium silicate

摘要

In this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO{sub}2, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>10{sup}6s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.