Modeling Short-Channel Effects for Design by Hand with MOSFET Series Association

摘要

This work addresses the impact of short-channel effects in the series association of MOS transistors. It has been observed that the simulation results obtained through the use of series association of short transistors in submicron technologies greatly diverge from the obtained through the use of a single device with equal total length. A simple procedure is proposed to circumvent this problem in the design by hand of CMOS analog circuits applying an improved compact MOSFET model to series associations of devices. Simple current sinks and sources are dimensioned and simulated in order to assess the reliability of the design methodology with the improved model.