A new Pspice based simulation platform has been adopted to help optimizing the device design for next-generation MV MOSFETs aiming for emerging applications in telecom, renewable energy, automotive etc. The Pspice sub-circuit models are synthesized from physics-based simulation and experimental characterization database and their parameters are tuned to match the nonlinear behavior of device parasitics. Dedicated circuits are designed to test the models under different possible switching scenarios so that their behavior matches the actual physics-based modeling results closely. Full-bridge DC-DC converter and active-clamp forward converter (including board parasitics and realistic transformer model) have been synthesized. This enables us to test newly designed MOSFETs in actual application circuits and examine detailed waveforms to refine the design process. Losses of individual device in a circuit are extracted so that the impact of replacing a particular set of devices by a newer generation technology can be understood clearly. Further, different die sizes can be simulated to optimize the active area for a particular product suitable for a specific application depending on the ratio of switching and conduction losses in the device. Overall, the new framework is expected to enable us to better define the requirements for the new generation of MV MOSFET technology so that they deliver more reliable and better performance in application circuits.
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