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A new digital readout integrated circuit (DROIC) with pixel parallel A/D conversion with reduced quantization noise

机译:一种新的数字读出集成电路(DROCO),像素并联A / D转换,随着量化噪声的减少

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This paper presents a digital ROIC for staring type arrays with extending counting method to realize very low quantization noise while achieving a very high charge handling capacity. Current state of the art has shown that digital readouts with pulse frequency method can achieve charge handling capacities higher than 3Ge~- with quantization noise higher than 1000e~-. Even if the integration capacitance is reduced, it cannot be lower than 1-3 fF due to the parasitic capacitance of the comparator. For achieving a very low quantization noise of 161 electrons in a power efficient way, a new method based on measuring the time to measure the remaining charge on the integration capacitor is proposed. With this approach SNR of low flux pixels are significantly increased while large flux pixels can store electrons as high as 2.33Ge~-. A prototype array of 32×32 pixels with 30um pitch is implemented in 90nm CMOS process technology for verification. Measurement results are given for complete readout.
机译:本文介绍了一种用于凝视型号的数字ROIC,具有扩展的计数方法来实现非常低的量化噪声,同时实现非常高的电荷处理能力。本领域的当前状态表明,具有脉冲频率方法的数字读数可以实现高于3GE〜 - 具有高于1000〜 - 的量化噪声的电荷处理能力。即使积分电容减小,由于比较器的寄生电容,它不能低于1-3 FF。为了以功率有效的方式实现161电子的非常低的量化噪声,提出了一种基于测量集成电容上剩余电量的时间的新方法。通过这种方法,低通量像素的SNR显着增加,而大的磁通像素可以将电子存储高达2.33ge〜 - 。具有30um间距的32×32像素的原型阵列以90nm CMOS工艺技术实现,用于验证。测量结果完全读出。

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