Preparation, Characterization, and FET Properties of 3,3',5,5'-Tetra-Phenyldiphenoquinone

摘要

In this work, tetraphenyldiphenoquinone (DPQ) was synthesized and characterized by single crystal structure analysis, ultraviolet-visible spectroscopy (UV-Vis) and cyclic voltammetry (CV). DPQ-based organic field-effect transistors (OFET) were fabricated with bottom contact configuration using bare SiO_2/Si substrate and hexamethyldisilazane (HMDS) treated substrate, respectively. The HMDS-treated device showed hole mobility of 8.7 × 10~(-7) cm~2 V~(-1) s~(-1), current on/off ratio of 1.2 × 10~2 and threshold voltage of-39 V. Devices with bare substrate showed no FET behaviors. Finally, film morphology was investigated by X-ray diffraction (XRD) analyses and the results showed that the HMDS treatment exhibits better crystallinity of DPQ on the film thus obtaining FET performance.