Theoretical Study of Bilayer Composite Barrier Based Ferroelectric Tunnel Junction Memory

摘要

In this work, majority carrier tunneling current in Ferroelectric tunnel junction (FTJ) with bilayer composite barrier is simulated theoretically by using finite difference method and Wentzel-Kramers-Brillouin (WKB) method. The simulation results reveal that the metal/Al₂O₃/HZO/Si FTJ has a significant enhanced tunneling electroresistance (TER) effect as compared to traditional FTJ, and are also consistent with others' experimental results.