A Scalable Low-Cost Manufacturing to Hybridize Infrared Detectors with Si Read-Out Circuits

摘要

A new device-chip hybridization method is described as a scalable manufacturing technique for infrared imagers and sensors. This method avoids low-yield, therefore costly, flip-chip bonding. A thin film of MBE-grown Ga-free nBn type-II superlattice layer structure, tuned for a very long-wavelength infrared (VLWIR), was removed from a GaSb seed substrate by a wet chemical process, subsequent by a physical transfer and Van der Waals attachment to a non-native silicon host substrate. Further device processing steps were performed on the transferred film that exhibited remarkable mechanical stability. VLWIR detectors were fabricated on transferred film, with dark current density of J_dark=8.8mA/cm^{2, quantum efficiency (QE) of up to %55 in long wavelength region, and cut-off wavelength of 16.2microns at 77K.}