Characterization of Chalcogenide Selectors for Crossbar Switch Used in Nonvolatile FPGA

摘要

Sputter deposited Ge_xSe_1-x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe_4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge_xSe_1-x film shows the good switching property for the selector with an on/off ratio of 4.8 × 10^4.