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Gain-based Cell Delay Modeling

机译:基于增益的细胞延迟建模

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摘要

Conventional cell delay modeling approaches calculate the propagation delay and output transition time of a CMOS logic cell, which is subjected to a noisy input waveform, by approximating this noisy waveform with a saturated ramp signal and then utilizing cell library delay look-up tables to report the output timing information. Modeling the input waveform as a saturated ramp may however result in significant error in the timing parameters of interest because the actual output waveform can be very different from the one that is implied by a simple saturated ramp input. This paper therefore presents, gcdm, a gain-based cell delay modeling technique for accurate computation of the electrical output waveform of a CMOS logic cell under a noisy input waveform. The key contribution of gcdm is that it directly calculates the output waveform of the logic cell without the need to approximate the input waveform. In effect, gcdm requires a new pre-characterization process for each cell in the library, resulting in construction of a small-signal gain lookup table. This lookup table-based approach is compatible with the existing timing analysis tools. The high accuracy of our approach is confirmed by Spice simulations.
机译:传统的小区延迟建模方法计算CMOS逻辑单元的传播延迟和输出转换时间,该传播延迟和输出转换时间通过近似于具有饱和斜坡信号,然后利用小区库延迟查找表来报告该噪声输入波形。输出定时信息。然而,根据饱和斜坡建模输入波形可能导致感兴趣的定时参数中的显着误差,因为实际输出波形可以与由简单的饱和斜坡输入所暗示的那个非常不同。因此,本文提出了GCDM,基于增益的电池延迟建模技术,用于在噪声输入波形下精确计算CMOS逻辑单元的电输出波形。 GCDM的关键贡献是它直接计算逻辑单元格的输出波形,而无需近似输入波形。实际上,GCDM需要对库中的每个单元的新预先表征过程,导致施工小信号增益查找表。这种基于查找表的方法与现有的时序分析工具兼容。我们的方法的高精度是通过Spice模拟确认的。

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