Effect of Glass Frit in Metallization Paste on the Electrical Losses in Bifacial N-type Crystalline Silicon Solar Cells

摘要

N-type crystalline silicon can be expected to achieve high-efficiency compared with p-type one. For the n-type solar cells, silver/aluminum paste has been used as metallization for p~+ emitter, which induces loss in open circuit voltage (V_(oc)) of the cells. In this study, the effects of glass frit in the metallization paste on the loss in V_(oc) are investigated, dividing the respective effects of the glass frit and the aluminum in the paste. The glass frit in the metallization paste decreases the V_(oc) due to shunting of p-n junction and increasing recombination current, even if the paste contains no aluminum.