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AdAM: Adaptive approximation management for the non-volatile memory hierarchies

机译:亚当:非易失性存储器层次结构的自适应近似管理

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Existing memory approximation techniques focus on employing approximations at an individual level of the memory hierarchy (e.g., cache, scratchpad, or main memory). However, to exploit the full potential of approximations, there is a need to manage different approximation knobs across the complete memory hierarchy. Towards this, we model a system including STT-RAM scratchpad and PCM main memory with different approximation knobs (e.g., read/write pulse magnitude/duration) in order to synergistically trade data accuracy for both STT-RAM access delay and PCM lifetime by means of an integer linear programming (ILP) problem at design-time. Furthermore, a runtime algorithm is proposed to adaptively tune the approximation knobs of both STT-RAM and PCM to obtain high energy savings while keeping error-per-second within acceptable ranges across the complete memory hierarchy. We evaluated our proposed technique (i.e., AdAM) in a baseline system consisting of 1-2MB STT-RAM scratchpad and 0.5-1GB PCM main memory. The experimental results demonstrate that AdAM improves the execution time and the lifetime of memory by up to 38.7% and 1.6X, respectively.
机译:现有的存储器近似技术侧重于在存储层级的单个级别(例如,缓存,刮擦器或主存储器)处采用近似。然而,为了利用近似的全部潜力,需要在整个内存层次结构上管理不同的近似瘤。为此,我们模拟包括STT-RAM Scratchpad和PCM主存储器的系统,具有不同的近似旋钮(例如,读/写脉冲幅度/持续时间),以便通过借助于STT-RAM访问延迟和PCM寿命来协同交易数据准确性设计时的整数线性规划(ILP)问题。此外,提出了一种运行时算法以自适应地调谐STT-RAM和PCM的近似旋钮,以获得高能量节省,同时保持跨越完整内存层级的可接受范围内的误差。我们评估了由1-2MB STT-RAM Scratchpad和0.5-1GB PCM主存储器组成的基线系统中所提出的技术(即,adam)。实验结果表明,ADAM将分别将执行时间和寿命提高至38.7 %和1.6倍。

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