This paper describes a 128×64b 4-read, 4-write ported register file for 6.5GHz operation in 1.2V 90nm CMOS technology. A wordline underdrive technique combined with local bitline merge NAND whose P/N skew is optimally programmable based on die leakage enables 12% faster performance with 20% reduction in delay variation and 5x reduction in robustness failing dies over optimized high-performance conventional implementation.
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机译:本文介绍了128×64b 4-读取的4-write寄存器文件,可在1.2V 90nm CMOS技术中进行6.5GHz操作。与局部位线合并NAND结合的WORDLINE UNDERDIVE技术,其P / N SKEW基于芯片泄漏最佳可编程,使得能够更快的性能,延迟变化的20%降低,鲁棒性的5倍降低未通过优化的高性能传统实现。
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