A robust embedded ladder-oxide/Cu multilevel interconnect technology for 0.13μm CMOS generation

摘要

A robust embedded Ladder-oxide(k=2.9)/Cu multilevel interconnect is demonstrated for 0.13 μm CMOS generation. A stable ladder-oxide IMD is integrated into the Cu metallization with minimum wiring pitch of 0.34 μm, and a single damascene (S/D) Cu-plug structure is applied. An 18 % reduction in wiring capacitance is obtained compared with SiO{sub}2 IMD. The stress- migration lifetime of vias on wide metals for S/D Cu-plug structure is much longer than dual damascene (D/D). The reliability test results such as electromigration (EM), TDDB of Cu interconnect, and pressure cooker test (PCT) are quite acceptable. Moreover, high flexibility in thermal design and packaging is obtained.