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Improving the ion current density distribution from a gridless ion source by optimizing the orientation

机译:通过优化方向来改善无栅离子源的离子电流密度分布

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Abstract: A Mark II gridless ion source and HCES5000 hollow cathode electron source are used for ion assisted deposition (IAD) of dense coatings. It is possible to check the ion beam profile with a beam probe translated at a right angle to the beam axis. By rotating the probe it is possible to eliminate the contribution form charge exchange ions and to estimate the mean free path of the energetic ions. The beam intensity is expressed as a polynomial in cosine to the angle between the ion track and the beam axis and we derive mathematical equations to describe the result in distribution of ion current density on a flat and on an umbrella shaped substrate holder. A grid of target points is introduced immediately in front of the holder an in turn we aim the ion gun towards each of these. In each case, we calculate the mean ion current density and the variance across the rotating substrate holder. Finally, we use the obtained maps to optimize the orientation of the ion gun. !17
机译:摘要:Mark II无栅离子源和HCES5000中空阴极电子源用于致密涂层的离子辅助沉积(IAD)。可以通过与束轴成直角平移的束探针检查离子束轮廓。通过旋转探针,可以消除电荷交换离子的贡献,并估算高能离子的平均自由程。束强度表示为离子轨迹与束轴之间夹角的余弦多项式,我们推导出数学方程式来描述离子电流密度在平面和伞形基板支架上的分布结果。靶点的网格被立即引入支架的前面,然后我们将离子枪对准每个靶子。在每种情况下,我们都计算平均离子电流密度和整个旋转基板支架上的方差。最后,我们使用获得的图来优化离子枪的方向。 !17

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