Electric Field and Temperature Dependence of Photoluminescence in Fluorescent Dye Doped Tris(8-hydroxyquinoline) Aluminum

摘要

We measured electric-field-induced fluorescence quenching (EFIFQ) under various temperatures in both undoped and fluorescent dye-doped tris(8-hydroxyquinoline )aluminum (AlQ_3) layers of organic light-emitting devices (OLEDs). Results show that for a given temperature doped AlQ_3 layers demonstrate smaller EFIFQ than undoped ones. The phenomenon is attributed to the narrower energy band-gap of the guest molecule relative to that of the host material, which makes it less prone to electric-field-induced dissociation of the excited state. Results also show that for a given doping condition increasing the temperature leads to an increase in EFIFQ, indicating that the EFIFQ is a thermally assisted process.