IN SITU HREM OF GE GROWTH IN AL MATRIX

摘要

The crystallization of Al:Ge amorphous thin films was studied intensively and various aspects were reported elsewhere. The crystallized area consists of a compact Al crystal in which a branched crystalline Ge is formed. Both, the Al crystal and the tips of the Ge branches grow at constant velocity at a given temperature. The velocity of the coupled interfaces is slow enough (few A/sec) enabling to study in sub-nano meter scale the evolution of both interfaces: the interface of crystalline Al in the amorphous Al:Ge matrix, as well as the interface of the crystalline Ge in the Al matrix. The dynamic of both interfaces was by in situ electron microscopy methods using heating holders and CCD video camera. These methods include Time Resolved Conventional Transmission Electron Microscopy (Dark and Bright fields), Time Resolved High Resolution Electron Microscopy (HREM) and Time Resolved Chemical Composition using Gatan Image Filter (GIF).