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Channel-Width-Edges-Dominated Degradation in Metal-Oxide Thin-Film Transistors under Positive Gate-Bias and Temperature Stress

机译：在正栅极 - 偏压下和温度胁迫下金属氧化物薄膜晶体管中的通道 - 宽度边缘降解

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《International Conference on Display Technology;Society for Information Display》||1-1|共1页
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Jiapeng Li; Lei Lu; Zhihe Xia; Sisi Wang; Hoi-Sing Kwok; Man Wong;
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1. Retraction notice to 'Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress' [Thin Solid Films, 528 (2013) 53-56] [J] . Tien-Yu Hsieh, Ting-Chang Chang, Te-Chih Chen, Thin Solid Films . 2018,第NOVa1期

机译：关于“研究DC和AC栅极偏置偏压下电荷陷阱效应引起的InGaZnO薄膜晶体管退化行为的撤回通知” [Thin Solid Films，528（2013）53-56]
2. Two-Step Electrical Degradation Behavior in $alpha$-InGaZnO Thin-Film Transistor Under Gate-Bias Stress [J] . Chen F.-H., Pan T.-M., Chen C.-H., Electron Device Letters, IEEE . 2013,第5期

机译：栅极偏压下的 $ alpha $ -InGaZnO薄膜晶体管中的两步电降解行为
3. Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress [J] . Xiaoliang Zhou, Yang Shao, Letao Zhang, IEEE Electron Device Letters . 2017,第9期

机译：在正栅极偏置下a-IGZO薄膜晶体管中的氧间隙形成
4. Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress [C] . Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, 2019 Electron Devices Technology and Manufacturing Conference . 2019

机译：负偏置正偏压和Al 2 O 3 钝化层在In-Si-O-C薄膜晶体管上抑制阈值电压偏移
5. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics. [D] . Zeumault, Andre. 2017

机译：了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
6. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature [O] . Byoung-Soo Yu, Jun-Young Jeon, Byeong-Cheol Kang, -1

机译：具有固溶处理的金属氧化物半导体和介电膜的可穿戴式1 V工作薄膜晶体管通过低温深紫外光退火在低温下制成
7. Gate-bias stress in amorphous oxide semiconductors thin-film transistors [O] . Lopes M. E., Gomes Henrique L., Medeiros M. C. R., 2013

机译：非晶氧化物半导体薄膜晶体管中的栅极偏置应力

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