Design and Analysis of a Carrier Depletion Type PIN Phase Shifter for High Speed Operations

摘要

Carrier depletion type Silicon Optical Modulator with PIN phase shifter for high speed operations was proposed. The study was conducted by varying carrier concentration to identify the optimum dopant concentration for the proposed 2 mm phase shifter design. Lumerical Software tool was used for simulation analysis. For the proposed phase shifter design at 40 Gbps data rate, 22.2 dB Extinction Ratio was obtained at 0.6 Vcm with absorption loss as 3.39 dB/cm. This enhances the performance of the modulator to be used for commercial applications.