(Invited) Development of Nanoporous Structures and Oscillatory Behavior During Anodization of n-InP in Alkaline Electrolytes

摘要

Electrochemical etching of semiconductors under anodic conditions can lead to the growth of nanoporous structures. There has been extensive research in this area for silicon and III-V electrodes. Porous structures are obtained when n-InP is anodized in aqueous KOH at concentrations of 2 mol dm~(-3) or greater; planar etching occurs below 1 mol dm~(-3). The observation of current oscillations during the anodization of semiconductors has been reported by several authors. Current oscillations on silicon in fluoride-containing electrolytes have been linked to the cyclic growth and dissolution of thin oxide layers. We have observed current oscillations on InP both in aqueous KOH and in aqueous (NH_4)_2S.