Effects of growth temperature on crystal structure, electrical, and photoluminescence of ZnO thin films

摘要

ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolisis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase monotonically with increasing temperature. We believed that the ZnO thin films quality improved by increasing growth temperature.