Study and modeling neural memory based on single electron transistor using Simon simulator

摘要

This paper presents a simulation of a single-electron transistor "SET" characteristics using MATLAB. SET I-V characteristics presented by developing MATLAB programs. Then we propose a neural circuitry based on single electron transistors. This kind of neural circuitry can be considered as a single-electron memory "SEM" with four voltages inputs and capacitors connected to a three-island structure extended with an extra junction. We present and discuss the functionality of this device using the SIMON simulator.