This paper presents the influence of the input and output harmonics networks of class F and F (exp -1) power amplifiers (PAs) to achieve high efficiency in microwave applications. The analysis and design of PAs are realised on Agilent ADS software. We use for this work a GaN HEMT transistor from Cree. Overall performances are evaluated using as input signal a sine and a 16QAM modulation at 900 MHz with 5.63 dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of even/odd harmonics in drain curves of these PA classes as well as the tradeoff linearity-efficiency.
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